N5 SENSORS INC — Department of Defense STTR Phase I: The proposed project will demonstrate high-frequency (0.5 5 GHz) operation of novel 2-dim

Description

The proposed project will demonstrate high-frequency (0.5 5 GHz) operation of novel 2-dimensional semiconductor molybdinum disulphide (MoS2) based field-effect transistors. Our project will focus on innovative growth startegies for large-area growth of MoS2 along with novel device design methodologies which will consider the tradeoffs between monolayer and multilayer device designs for high-frequency applications. Although in recent years studies have indicated exciting possibilities of the 2-D materials, significant challenges remain in realizing useful devices. Most of the efforts concentrate only on the superior properties of the 2-D channel material. The device performance in 2D materials will be largely dominated by contacts and the interfaces. The issue of device engineering and design using these 2D materials should include detailed interface physics and role of contact parasitics. In collaboration with George Mason University, N5 will develop large-area growth strategies, understanding the device physics and engineering including the role of interface transport with detailed characterization of defects and the effect of contact properties. The end goal of this project is to demonstrate the feasibility of high-frequency transistors realized using MoS2 materials. Key components of our approach are: 1) large-area growth of mono and multi-layer MoS2 layers using chemical vapor deposition methods with emphasis on large-area uniformity and reproducibility, 2) fabrication of large-periphery RF devices utilizing only conventional fabrication methods using contact or projection lithography for high throughput device manufacturing, and 3) high-frequency operation through innovations in source/drain contact engineering, gate dielectrics, and novel concept of"layer engineering".