SUNLITE SCIENCE & TECHNOLOGY, INC — National Aeronautics and Space Administration SBIR Phase I: S12

Description

Space electronics must have certain radiation hardness to meet a missionrsquo;s life span. In addition, the size, weight, and power (SWaP) are usually constrained. This project aims at developing a radiation harden class AB high-voltage (HV) amplifier-array integrated circuit (IC) that will be an ideal component to be selected to build a miniaturized deformable mirror (DM) driver for a space coronagraphic instrument (CGI). Class AB operation will ensure low-static dissipation and high driving efficiency, which will make it feasible to integrate over 100 HV amplifiers in a single chip. To enhance radiation resistance, the following measurements will be taken for prototyping a proposed IC; 1) both low- and high-voltage bipolar transistors are the first favored selection, 2) MOS transistors featuring thin gate oxide layers are preferred, 3) transistors with much higher than required voltage-ratings are the another preferred selection, 4) layout techniques for improving radiation resistance, 5) a bias for ensured class AB operation will provide an additional performance adjustment, and 6) hermetic IC package will provide an additional radiation shielding. By the end of the Phase I, HV amplifiers configured with bipolar transistors will be evaluated at gate level, and an IC containing 128 HV amplifiers will be fabricated for driving electrostrictive lead magnesium niobate (PMN) actuators. This IC that contains 650V MOS transistors for 100V operation, is served to evaluate the electrical performance for driving a PMN DM, and will be an important reference to design and fabricate radiation harden amplifier-array ICs in Phase II. nbsp;