EPIR, INC. — Department of Energy SBIR Phase I: 36c

Description

Conventional bump bonding technique is highly limited considering the requirements of low mass and high-speed, high-density detectors for high-energy particles of the future. Reliable, readily manufacturable technologies to interconnect silicon pixel detectors with high density CMOS front-end integrated circuits are sought. Demonstrate Modified Direct Bond Interconnect technology – a cost-effective, novel choice of vertical integration method with the statistical single bump failure rate well within the specifications and that ensures longer term reliability, thermal compliancy of integrated assemblies in highly segmented, high density silicon detectors for high energy physics applications. The Phase I effort is aimed at formulating a detector-scale thermo-mechanical model of the integrated detector-readout assembly to optimize the material and geometry of each component involved in the integration as well as demonstrating the feasibility of this method by fabricating the prototype by integrating (with MoDiBI) ETROC (readout chip) and LGAD (detector chip) contributed by Fermilab and validate the approach by related charge injection, laser irradiation tests to validate the functionality at Fermilab. Modified Direct Bond Interconnect technology will find immediate application in detector chips to be used in MIP Timing Detector to be deployed as part of the CMS Upgrade at CERN. Longer term applications include full vertically integrated highly segmented, high density detectors for nuclear particle detectors, advanced infrared detector for defense and security application for active imaging systems, such as LAser Detection And Ranging (LADAR) and a wide variety of medical imaging applications such as Clinical dosimetry, Positron Emission Tomography (PET) to name a few.