GEEGAH LLC — Department of Defense SBIR Phase II: HR001120S0019-003
GEEGAH LLC — SBIR Phase II award from Department of Defense.
Phase II SBIR prototype / development signal
- Phase II is where Department of Defense funds deeper R&D after feasibility. Incumbents with Phase II history are serious competitors on adjacent topics.
- Use this award as past-performance context and to map customer organizations for STRATFI/TACFI-style transition planning.
- At $1,750,000, this is a large obligation for typical SBIR Phase sizing — worth reviewing for scope breadth and teaming opportunity.
- Topic code HR001120S0019-003 links this award to a solicitation family — search the same topic stem for incumbents and recompete timing.
- Amount
- $1,750,000
- Agency
- Department of Defense · Defense Advanced Research Projects Agency
- Program / Phase
- SBIR · Phase II
- Topic
- HR001120S0019-003
- Solicitation
- HR001120S0019.I
- NAICS
- —
- Place of performance
- NY
- Period
- 2021-07-30 → 2024-07-30
Description
At present, there is no USA-based foundry MPW service for advanced piezoelectric MEMS. There is an opportunity to revolutionize electronics and intelligent microsystems by providing a widely applicable piezoelectric MEMS process to the US R&D community, focusing on providing a secure option for Department of Defense demand. This project will develop CMOS integrated piezoelectric MEMS for academic, commercial, and DOD customers. The MPW will be supported by a PDK (Process Design Kit) that allows users to design piezoelectric Micro/Nano systems, including MEMS and CMOS circuitry, to control the devices. The PDK will be developed via fabrication runs using force kinds of base substrates and enable device topologies to enable a vast majority of piezoelectric devices. Released and solidly mounted piezoelectric devices will be enabled, allowing for the development of resonators, filters, piezoelectric micromachined transducers, gigahertz transducers all in one process flow. This project will also develop CMOS circuits that can be used to drive and sense the piezoelectric transducer for rapid integration of monolithic piezoelectric devices with CMOS. This level integration of multiple MEMS devices in CMOS has not been possible before and will enable orders of magnitude reduction in size, weight, and power of DOD microsystems. The integration level will open the possibility of the circuits community to utilize the PDK and push the frontiers of More-than-Moore and edge-sense-compute paradigms.