GEEGAH LLC — Department of Defense SBIR Phase I: HR001120S0019-003

GEEGAH LLC — SBIR Phase I award from Department of Defense.

Amount
$224,967
Agency
Department of Defense · Defense Advanced Research Projects Agency
Program / Phase
SBIR · Phase I
Topic
HR001120S0019-003
Solicitation
HR001120S0019.I
NAICS
Place of performance
NY
Period
2020-08-17 → 2021-05-16

Description

Piezoelectric MEMS technology has wide applicability to implementing microsystems ranging from inertial sensors, RF-MEMS filters, integrated photonic optical modualtors, quantum communication chips, microfluidics, computation, and zero-power sensors for ioT applications. This work addresses the need to develop a process flow for implementing a wide variety of teh sub-components needed to implement systems, including integration on CMOS substrates. This effort will develop a piezoelectric MEMS process design kit to enable rapid and reproduce-able piezoelectric microsystems utilizing piezoelectric thin films. The effort will focus on the development of a process flow, design rules, scale-able device layouts, that a user can use to quickly implement microsystems. The designs will be compatible with a multi-user run process that will be implemented at the Cornell Nanoscale Facility and the Northeastern University cleanroom facility. The project will run the process flow to confirm the device parameters to develop accurate film properties and process limits. Prototype devices will be created for customers for test, as marketing for customers purchasing the devices, and to use the PDK to implement proprietary designs for product lines.