ADROIT MATERIALS, INC. — Department of Defense SBIR Phase II: A19-018
ADROIT MATERIALS, INC. — SBIR Phase II award from Department of Defense.
- Amount
- $550,000
- Agency
- Department of Defense · Army
- Program / Phase
- SBIR · Phase II
- Topic
- A19-018
- Solicitation
- 19.1
- NAICS
- —
- Place of performance
- NC
- Period
- 2020-07-09 → 2022-02-14
Description
The objective of this proposal is to develop an MOCVD growth process that will allow for the growth of thick, relaxed, doped and undoped, c-oriented AlGaN layers of any composition on the c-plane of native GaN and AlN substrates. Although these AlGaN layers will be relaxed, they will have a dislocation density similar to that of the used native substrates (E3 - E5 cm-2). This will be achieved by growing AlGaN layers on GaN and AlN surfaces with pyramidal facets, allowing for the nucleation of misfit dislocations on a preferred slip system. The process will be combined with the misfit dislocation management to control threading dislocation density at the surface.