AGNITRON TECHNOLOGY, INC. — Department of Defense SBIR Phase I: AF171-018
AGNITRON TECHNOLOGY, INC. — SBIR Phase I award from Department of Defense.
- Amount
- $149,970
- Agency
- Department of Defense · Air Force
- Program / Phase
- SBIR · Phase I
- Topic
- AF171-018
- Solicitation
- 2017.1
- NAICS
- —
- Place of performance
- MN
- Period
- 2017-09-11 → 2018-06-11
Description
This Phase I program sets out to capitalize on recent advances in epitaxial growth of -Ga2O3 which have the potential to significantly improve upon the performance of currently available power electronics devices. Specifically, -Ga2O3, offers fundamental properties such as its ability to withstand very large electric fields that suggest its use as a power electronics material will lead to device performance beyond even that of SiC and GaN. We propose to determine the growth parameters that yield high quality, doped -Ga2O3 epitaxial layers and (AlxGa1-x)2O3/-Ga2O3 epitaxial heterostructures. That is, MOSFET and HEMT structures. For this program we have assembled a team of renowned scientists with expertise in the growth and characterization of semiconductor oxides.