AGNITRON TECHNOLOGY, INC. — National Aeronautics and Space Administration SBIR Phase I: H9.03
AGNITRON TECHNOLOGY, INC. — SBIR Phase I award from National Aeronautics and Space Administration.
Phase I SBIR feasibility signal
- Phase I awards fund proof-of-concept work. For capture teams, they mark early interest from National Aeronautics and Space Administration in a technical approach.
- Watch for Phase II follow-ons from the same firm/topic family — that conversion path is where budgets and transition pressure rise.
- Obligated amount $124,928. Cross-check similar awards in the same agency and technology tags for going-rate context.
- Topic code H9.03 links this award to a solicitation family — search the same topic stem for incumbents and recompete timing.
- Amount
- $124,928
- Agency
- National Aeronautics and Space Administration
- Program / Phase
- SBIR · Phase I
- Topic
- H9.03
- NAICS
- —
- Place of performance
- MN
- Period
- 2014-06-20 → 2014-12-19
Description
This project is directed to the development of low-loss, high power-density Aluminum Nitride (AlN)/Gallium Nitride (GaN) heterostructure based transistors for enabling high-efficiency solid state power amplifiers (SSPA) needed for advancing capabilities of future robotic and human exploration spacecraft. The AlN/GaN heterostructure is a particularly attractive system for switch-mode applications due to the extremely high charge density, high electron mobility, high intrinsic breakdown field, and physical thinness achievable and has seen widespread investigation toward solid-state amplifiers in the recent years. However, very few innovations have been proposed with this heterostructure despite its expansive capacity for various creative device concepts. A new patent-pending multichannel AlN/GaN Field Screening High Electron Mobility Transistor (FS-HEMT) design is described. Preliminary experimental results are presented validating design principles that will eliminate current collapse phenomenon at X- and Ka-band frequencies that has plagues traditional HEMT designs and will ultimately deliver a low-loss switch-mode device.