CAPORUS TECHNOLOGIES INC — Department of Energy SBIR Phase I: C53-33c

Description

Active pixel sensors have been developed and implemented in a wide array of applications, including image sensors for cameras, sensors for medical imaging, and as detectors for nuclear physics investigations with the Relativistic Heavy Ion Collider and the Large Hadron Collider. Many of these applications, including nuclear physics detectors, medical imaging sensors, and sensors for aerospace and defense applications, must have improved radiation hardness against upset or damage. Caporus is developing a new type of silicon-on-insulator substrate for radiation hardness and high frequency performance for active pixel sensors. The unique properties of these substrates will improve active pixel sensors by increasing radiation hardness, improving sensitivity, and reducing charge accumulation. The phase I effort will demonstrate the feasibility of implementing Caporus’ structured dielectrics for silicon-on-insulator substrates. Caporus will adapt its deposition processes and materials for compatibility with silicon substrates and semiconductor processing. The range of achievable deposition thicknesses, adhesion to the silicon wafers, and compatibility with wafer bonding will be demonstrated. By determining the materials and processes for these new silicon-on-insulator substrates in the phase I effort, the fabrication and testing of prototype active pixel sensors will be completed with Fermilab and other partners in phase II. After this development program, Caporus will provide a new substrate platform on which end-users can build active pixel sensors and a multitude of other devices. Caporus’ new substrates will provide enabling capabilities for applications that require radiation hardness and/or RF performance. By working with customers and US-based foundries, the substrates will be a platform for innovation in science, defense, transportation, and communications.