GENESIC SEMICONDUCTOR INC. — Department of Defense SBIR Phase I: DMEA211-001
GENESIC SEMICONDUCTOR INC. — SBIR Phase I award from Department of Defense.
- Amount
- $167,497
- Agency
- Department of Defense · Defense Microelectronics Activity
- Program / Phase
- SBIR · Phase I
- Topic
- DMEA211-001
- Solicitation
- 21.1
- NAICS
- —
- Place of performance
- VA
- Period
- 2021-07-29 → 2022-02-10
Description
GeneSiC Semiconductor is leveraging recently reported novel techniques for high-performance 4H-silicon carbide MOSFETs, deep in-house expertise in SiC device design and robust device manufacturing facilities at automotive-qualified production foundry X-Fab Texas, for the development of a comprehensive 4H-SiC BiCMOS process platform in this DMEA SBIR program for mission-critical DoD applications and beyond. SiC BiCMOS integrated circuits will be fabricated at X-Fab Texas, along with a detailed process design kit. Based on the process, statistical data of critical parameters and long-term reliability data for technology qualification will be reported. For both CMOS transistors and high-voltage MOSFETs, compact models incorporating statistical data shall be included in the process design kit for fast and accurate circuit simulations. A successful commercialization of high-temperature SiC integrated circuits to be developed in this program will have a significant impact on electric actuation and engine control applications in the military/commercial aircraft and aero-space markets.